Method of manufacturing an integrated circuit

ABSTRACT

A method of forming an integrated circuit comprises forming a first doped region in a substrate using a first angle ion implantation performed on a first side of a gate structure. The gate structure has a length in a first direction and a width in a second direction. The method also comprises forming a second doped region in the substrate using a second angle ion implantation performed on a second side of the gate structure. The first angle ion implantation has a first implantation angle with respect to the second direction and the second angle ion implantation has a second implantation angle with respect to the second direction. Each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No.12/944,104, filed Nov. 11, 2010, now U.S. Pat. No. 8,859,380, issuedOct. 14, 2014, which is incorporated herein by reference in itsentirety.

TECHNICAL FIELD

The present disclosure relates generally to the field of semiconductordevices, and more particularly, to integrated circuits and methods offorming the integrated circuits.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs and, forthese advances to be realized, similar developments in IC processing andmanufacturing are needed.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometry size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling downprocess generally provides benefits by increasing production efficiencyand lowering associated costs. Such scaling-down also produces arelatively high power dissipation value, which may be addressed by usinglow power dissipation devices such as complementarymetal-oxide-semiconductor (CMOS) devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the numbers and dimensions of the various features may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a flowchart illustrating an exemplary method of forming anintegrated circuit.

FIG. 2A is a schematic drawing illustrating a top view of an exemplarintegrated circuit that is subjected to a plurality of ionimplantations.

FIG. 2B is a schematic drawing illustrating a cross-sectional view takenalong the section line 2B-2B shown in FIG. 2A.

FIG. 3 is a schematic drawing illustrating relations between thresholdvoltage variations and heights of gate structures in accordance withsome embodiments.

FIG. 4A is a schematic drawing showing a table including experimentaldata of drain-induce-barrier-lowing (DIBL) effect and on current(I_(on)) in accordance with some embodiments.

FIG. 4B is a schematic drawing showing a table including simulation dataof drain-induce-barrier-lowing (DIBL) effect and on current (I_(on)) inaccordance with some embodiments.

FIG. 5 is a schematic drawing illustrating relations between transistorresistances and gate lengths of transistors in accordance with someembodiments.

FIG. 6 is a schematic drawing illustrating relations between electronmobility and gate lengths of transistors in accordance with someembodiments.

DETAILED DESCRIPTION

Generally, a plurality of ion implantations have been implemented forforming source/drain (S/D) regions, lightly-doped drain (LDD) regions,and pocket regions of transistors. In some examples, the ionimplantations each have an implantation direction that is orthogonal toeach side edge of gate electrodes. In some other situations, a quadrupleion implantation process is performed on a wafer while it is rotated at0°, 90°, 180°, and 270°.

It is found that while the integrated circuit is scaled down, the ionimplantations for forming the S/D regions, LDD regions, and/or pocketregions may be blocked due to a high aspect ratio of the height of thegate electrode to the space of the gate electrodes. Blocking the ionimplantation may subject electrical characteristics of devices on thesame wafer to an undesired variation. The substantially uniformelectrical characteristics of devices are not achieved.

It is understood that the following descriptions provides many differentembodiments, or examples, for implementing different features of thedisclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, such that the features may not be in directcontact. In addition, spatially relative terms, for example, “lower,”“upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,”“top,” “bottom,” etc. as well as derivatives thereof (e.g.,“horizontally,” “downwardly,” “upwardly,” etc.) are used for ease of thepresent disclosure of one features relationship to another feature. Thespatially relative terms are intended to cover different orientations ofthe device including the features.

FIG. 1 is a flowchart illustrating an exemplary method of forming anintegrated circuit in accordance with some embodiments. In FIG. 1, amethod 100 of forming an integrated circuit can include forming aplurality of gate structures longitudinally arranged along a firstdirection over a substrate (step 110). The method 100 can furtherinclude performing a plurality of angle ion implantations to thesubstrate (step 120). Each of the angle ion implantations can have arespective implantation angle with respect to a second direction. Thesecond direction is substantially parallel with a surface of thesubstrate and substantially orthogonal to the first direction. Each ofthe implantation angles can be substantially larger than 0°.

FIG. 2A is a schematic drawing illustrating a top view of an exemplarintegrated circuit that is subjected to a plurality of ionimplantations. In FIG. 2A, an integrated circuit 200 can include atleast one transistor, e.g., transistor 201. The integrated circuit 200can be a digital circuit, an analog circuit, a mixed-signal circuit, astatic random access memory (SRAM) circuit, an embedded SRAM circuit,dynamic random access memory (DRAM) circuit, an embedded DRAM circuit, anon-volatile memory circuit, e.g., FLASH, EPROM, E²PROME, afield-programmable gate circuit, or any combinations thereof.

Referring to FIG. 2A, the integrated circuit 200 can include a pluralityof gate structures, e.g., gate structures 210 a-210 c, formed over asubstrate 203. The gate structures 210 a-210 c can be routed in adirection 211, e.g., a routing direction. In some embodiments, thesubstrate 203 may include an elementary semiconductor material, acompound semiconductor material, an alloy semiconductor material, or anyother suitable material or combinations thereof. The elementarysemiconductor material can include silicon or germanium in crystal,polycrystalline, or an amorphous structure. The compound semiconductormaterial can include silicon carbide, gallium arsenide, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide.The alloy semiconductor material can include SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP. In at least one embodiment, thealloy semiconductor substrate may have a gradient SiGe feature in whichthe Si and Ge composition change from one ratio at one location toanother ratio at another location. In another embodiment, the alloy SiGeis formed over a silicon substrate. In yet another embodiment, a SiGesubstrate is strained. Furthermore, the semiconductor substrate may be asemiconductor on insulator, such as a silicon on insulator (SOI), or athin film transistor (TFT). In some examples, the semiconductorsubstrate may include a doped epitaxial layer or a buried layer. Inother examples, the compound semiconductor substrate may have amultilayer structure, or the substrate may include a multilayer compoundsemiconductor structure.

In some embodiments, the gate structures 210 a-210 c can each be aconductive gate structure, e.g., a polysilicon gate structure, a metalgate structure, a dummy gate structure, or any suitable gate structure.For example, a conductive gate structure can have a stack structureincluding a gate dielectric layer, a conductive material layer, and/orother suitable layers. A metal gate structure can have a stack structureincluding a high dielectric constant gate layer, a diffusion barrierlayer, a metal work function layer, a metallic layer, and/or othersuitable layers. A dummy gate structure can have a stack structureincluding a dummy material layer, a hard mask layer, and/or othersuitable layers.

Referring again to FIG. 2A, a direction 213 can be substantiallyparallel with a surface of the substrate 203 and substantiallyorthogonal to the direction 211. The substrate 203 of the integratedcircuit 200 can be subjected to a plurality of angle ion implantations,e.g., angle ion implantations 220 a-220 d. The angle ion implantations220 a-220 d can form at least portions of a plurality of doped regions,e.g., doped regions 225 a-225 d, which are formed in the substrate 203.The doped regions 225 a-225 d can each be adjacent to at least onesidewall of the gate structures 210 a-210 c. For example, the dopedregion 225 a is adjacent to the sidewall of the gate structure 210 a.The doped region 225 b is adjacent to the sidewalls of the gatestructures 210 a and 210 b. The doped region 225 c is adjacent to thesidewalls of the gate structures 210 b and 210 c. The doped region 225 dis adjacent to the sidewall of the gate structure 210 c. It is notedthat the number of the angle ion implantations 220 a-220 d is merelyexemplary. The scope of the present application is not limited thereto.

Referring to FIG. 2A, the angle ion implantations 220 a-220 d can eachhave an implantation angles θ₁-θ₄, respectively, with respect to thedirection 213. Each of the implantation angles θ₁-θ₄ can besubstantially larger than 0°. In some embodiments, the term“substantially larger than 0°” can represent that the implantationangles θ₁-θ₄ each are substantially equal to or larger than 5°. In otherembodiments, each of the implantation angles θ₁-θ₄ can be in the rangefrom about 5° to about 40°. In some other embodiments, each of theimplantation angles θ₁-θ₄ can be in the range from about 50° to about85°. In yet still some other embodiments, each of the implantationangles θ₁-θ₄ can be in the range from about 15° to about 40°.

FIG. 2B is a schematic drawing illustrating a cross-sectional view takenalong the section line 2B-2B shown in FIG. 2A. In FIG. 2B, the gatestructures 210 a-210 c can be formed over the substrate 203. Spacers(not labeled) can be disposed on sidewalls of the gate structures 210a-210 c. The gate structures 210 a and 210 b can have a space s. Each ofthe gate structures 210 a-210 c can have a height h. An aspect ratio ofthe height to space can be represented as h/s.

In some embodiments, the angle ion implantation 220 a-220 d can each betilted with an angle φ that is tilted from a direction that issubstantially orthogonal to the surface 203 a of the substrate 203. Insome embodiments, a range of the tilt angle φ can be from about atan(s/2h) to about a tan(s/h). Due to the use of the implantation anglesθ₁-θ₄, the tilt angle φ can be larger than a tan(s/2h) and the shieldingeffect resulting from the height of the gate structures 210 a-210 c canbe reduced. In other embodiments, the tilt angle φ of about a tan(s/2h)or less can still be applied for the angle ion implantations 220 a-220d. In some embodiments, around 50% or more of the dosage can beimplanted under the gate structures 210 a-210 c.

The angle ion implantation 220 a-220 d can be pocket ion implantations,source/drain (S/D) ion implantations, lightly-doped drain (LDD) ionimplantations, and/or any ion implantations that are performed in ornear to doped regions 225 a-225 d. In some embodiments, the dopedregions 225 a can include a S/D doped region 221 a and a pocket dopedregion 223 a, the doped regions 225 b can include a S/D doped region 221b and pocket doped regions 223 b and 223 c, the doped regions 225 c caninclude a S/D doped region 221 c and pocket doped regions 223 d and 223e, and the doped regions 225 d can include a S/D doped region 221 d anda pocket doped region 223 f.

In some embodiments using S/D ion implantations, the S/D doped regions221 a-221 d can be formed in the substrate 203. In other embodimentsusing pocket ion implantations, the pocket doped regions 223 a-223 f canbe formed in the substrate 203 and adjacent to the sidewalls of the gatestructures 210 a-210 c. In some embodiments for forming at least oneN-type transistor, the S/D doped regions 221 a-221 d can have N-typedopants such as Arsenic (As), Phosphorus (P), other group V elements, orany combinations thereof, and the pocket doped regions 223 a-223 f canhave P-type dopants such as Boron (B) and/or other group III elements.In other embodiments for forming at least one P-type transistor, the S/Ddoped regions 221 a-221 d can have dopants such as Boron (B) and/orother group III elements, and the pocket doped regions 223 a-223 f canhave N-type dopants such as Arsenic (As), Phosphorus (P), other group Velements, or any combinations thereof.

FIG. 3 is a schematic drawing illustrating relations between thresholdvoltage variations and heights of gate structures in accordance withsome embodiments. In FIG. 3, the vertical axis represents thresholdvoltage variations (ΔV_(th)), and the horizontal axis represents heightsof gate structures 210 a-210 c (shown in FIG. 2B). In at least theembodiment depicted in FIGS. 2A/2B, the space between the gatestructures 210 a and 210 b can be fixed around 90 nm. For sample 1, fourpocket ion implantations are performed. The ion implantations each havean implantation angle that is orthogonal to a side edge of the gatestructure. That is, the ion implantations are performed while thesubstrate is rotated at 0°, 90°, 180°, and 270°. For sample 2, twopocket ion implantations are performed. One of the two pocket ionimplantations is performed on one side edge of the gate structureshaving a 0-degree implantation angle, and the other one is performed onthe opposite side edge of the gate structures having a 0-degreeimplantation angle. For sample 3, four pocket ion implantations 220a-220 d are performed. Each of the implantation angles θ₁-θ₄ is about30°. In some embodiments, the implantation dosage of each pocket ionimplantation of sample 3 is lower than those of the sample 1 and sample2.

As noted, the space between two neighboring gate structures is fixed. Ifthe height of the gate structures is increased, the aspect ratio (h/s)of the gate structures is also increased. Due to the increase of theaspect ratio, the threshold voltage variation (ΔV_(th)) in each of thesamples is increased.

It is also noted that the sample 3 has pocket ion implantations eachhaving the implantation angle that is substantially larger than 0°,e.g., about 30°. It is found that the threshold voltage variation(ΔV_(th)) of the sample 3 is substantially lower than those of thesamples 1 and 2. With the lower threshold voltage variation (ΔV_(th)),more uniform electrical characteristics, e.g., driving current, of thetransistors can be achieved.

FIG. 4A is a schematic drawing showing a table including experimentaldata of drain-induce-barrier-lowing (DIBL) effect and on current(I_(on)) in accordance with some embodiments. In FIG. 4A, the sample 4has four pocket ion implantations and the same implantation angles asthe sample 1 described above in conjunction with FIG. 3. For sample 5,four pocket ion implantations 220 a-220 d are performed. Each of theimplantation angles θ₁-θ₄ is about 15°. In some embodiments, theimplantation dosage of each pocket ion implantation of sample 5 is lowerthan that of the sample 4. As shown in FIG. 4A, the sample 5 has a lowerDIBL effect and a higher on current. The DIBL effect and on current ofthe sample 5 are better than those of the sample 4.

FIG. 4B is a schematic drawing showing a table including simulation dataof drain-induce-barrier-lowing (DIBL) effect and on current (I_(on)) inaccordance with some embodiments. As shown in FIG. 4B, the simulationresults of DIBL effect and on current of the sample 5 are better thanthose of the sample 4. As shown in FIGS. 4A-4B, the trend of theexperimental and simulation data regarding DIBL effect and on currentare consistent.

FIG. 5 is a schematic drawing illustrating relations between transistorresistances and gate lengths of transistors in accordance with someembodiments. In FIG. 5, the vertical axis represents transistorresistances (R_(tot)) while the transistors are turned on and thehorizontal axis represents gate lengths (L_(g)) of the transistors. Forthe sample 6, four pocket ion implantations are performed. The pocketion implantations can have the same implantation angles as the sample 1described above in conjunction with FIG. 3. For sample 7, four pocketion implantations 220 a-220 d are performed. Each of the implantationangles θ₁-θ₄ is about 30°. For sample 8, four pocket ion implantations220 a-220 d are performed. Each of the implantation angles θ₁-θ₄ isabout 25°. As shown in FIG. 5, lines of samples 6-8 are connectedthrough average values of the samples at different gate lengths. It isfound that the transistor resistances of the samples 7 and 8 are lowerthan those of the sample 6. In some embodiments, the implantation dosageof each pocket ion implantation of sample 7 or sample 8 is lower thanthat of the sample 6.

FIG. 6 is a schematic drawing illustrating relations between electronmobility and gate lengths of transistors. In FIG. 6, the vertical axisrepresents electron mobility and the horizontal axis represents gatelengths (L_(g)) of the transistors. As shown in FIG. 6, the electronmobility of the samples 7 and 8 are higher than those of the sample 6.

It is noted that the steps of the method 100 described above inconjunction with FIGS. 1 and 2A-2B are merely exemplary. The method 100can include different steps according to different process flows. Forexample, the gate structures 210 a-210 c can be formed by a gate-firstprocess or a gate-last process. In some embodiments using a gate-lastprocess, the method 100 can include a gate replacing process. The gatestructures 210 a-210 c can be dummy gate structures. The dummy gatestructures 210 a-210 c can each include a dummy gate material and a hardmask material formed thereover. The dummy gate material can be made ofat least one material such as polysilicon, amorphous silicon, siliconoxide, silicon nitride, or a material having an etching rate that issubstantially different from the spacers (shown in FIG. 2B).

For the gate-last process, the hard mask materials and the dummy gatematerials can be removed, for example, by a wet etch process, a dry etchprocess, or any combinations thereof. After removing the dummy gatematerials, the method 100 can include forming gate electrode materialwithin openings in which the dummy gate materials are disposed. In someembodiments, the gate electrode material can be a stack structureincluding a diffusion barrier layer, a metallic work function layer, ametallic conductive layer, and/or other suitable material layers.

In some embodiments, at least one high dielectric constant (high-k)layer (not shown) can be formed under the gate electrode material. Thehigh-k dielectric layer can include high-k dielectric materials such asHfO₂, HfSiO, HfSiON, HfTaO, HfSiO, HfZrO, other suitable high-kdielectric materials, or any combinations thereof. In some embodiments,the high-k material may further be selected from metal oxides, metalnitrides, metal silicates, transition metal-oxides, transitionmetal-nitrides, transition metal-silicates, oxynitrides of metals, metalaluminates, zirconium silicate, zirconium aluminate, silicon oxide,silicon nitride, silicon oxynitride, zirconium oxide, titanium oxide,aluminum oxide, hafnium dioxide-alumina alloy, other suitable materials,or any combinations thereof.

In some embodiments, the diffusion barrier can be configured to preventmetallic ions of the work function metal material from diffusing intothe gate dielectric material. The diffusion barrier may comprise atleast one material such as aluminum oxide, aluminum, aluminum nitride,titanium, titanium nitride (TiN), tantalum, tantalum nitride, othersuitable material, and/or combinations thereof.

In some embodiments, the metallic work function layer can include atleast one P-metal work function layer and/or at least one N-metal workfunction layer. The P-type work function materials can includecompositions such as ruthenium, palladium, platinum, cobalt, nickel, andconductive metal oxides, and/or other suitable materials. The N-typemetal materials can include compositions such as hafnium, zirconium,titanium, tantalum, aluminum, metal carbides (e.g., hafnium carbide,zirconium carbide, titanium carbide, aluminum carbide), aluminides,and/or other suitable materials. In some embodiments, the metallicconductive layer can be made of at least one material, such as aluminum,copper, Ti, TiN, TaN, Ta, TaC, TaSiN, W, WN, MoN, MoON, RuO₂, and/orother suitable materials.

In some embodiments, dielectric materials, contact plugs, via plugs,metallic regions, and/or metallic lines (not shown) can be formed overthe gate electrode portions 210 a-210 c for interconnection. Thedielectric layers may include materials such as silicon oxide, siliconnitride, silicon oxynitride, low-k dielectric material, ultra low-kdielectric material, or any combinations thereof. The via plugs,metallic regions, and/or metallic lines can include materials such astungsten, aluminum, copper, titanium, tantalum, titanium nitride,tantalum nitride, nickel silicide, cobalt silicide, other properconductive materials, and/or combinations thereof. The via plugs,metallic regions, and/or metallic lines can be formed by any suitableprocesses, such as deposition, photolithography, and etching processes,and/or combinations thereof.

In an exemplary embodiment, a method of forming an integrated circuitincludes forming a plurality of gate structures longitudinally arrangedalong a first direction over a substrate. A plurality of angle ionimplantations are performed to the substrate. Each of the angle ionimplantations has a respective implantation angle with respect to asecond direction. The second direction is substantially parallel with asurface of the substrate and substantially orthogonal to the firstdirection. Each of the implantation angles is substantially larger than0°.

In another exemplary embodiment, an integrated circuit includes aplurality of gate structures longitudinally arranged along a firstdirection over a substrate. A space (s) is between two neighboring gatestructures, and the gate structures each have a height (h). A pluralityof doped regions each are adjacent to at least one sidewall of the gatestructures. The doped regions are formed by a plurality of angle ionimplantations. Each of the angle ion implantations has a respectiveimplantation angle with respect to a second direction. The seconddirection is substantially parallel with a surface of the substrate andsubstantially orthogonal to the first direction. Each of theimplantation angles is substantially larger than 0°.

An aspect of this description relates to a method of forming anintegrated circuit. The method comprises forming a first doped region ina substrate using a first angle ion implantation performed on a firstside of a gate structure. The gate structure has a length in a firstdirection and a width in a second direction. The method also comprisesforming a second doped region in the substrate using a second angle ionimplantation performed on a second side of the gate structure. The firstangle ion implantation has a first implantation angle with respect tothe second direction and the second angle ion implantation has a secondimplantation angle with respect to the second direction. Each of thefirst implantation angle and the second implantation angle issubstantially larger than 0° and less than 90°.

Another aspect of this description relates to a method of forming atransistor. The method comprises forming a dummy gate structure having alength in a first direction and a width in a second direction over asubstrate. The method also comprises forming a first doped region in thesubstrate on a first side of the dummy gate structure using a firstpocket ion implantation. The method further comprises forming a seconddoped region in the substrate on a second side of the dummy gatestructure using a second pocket ion implantation different from thefirst pocket ion implantation. The first pocket ion implantation has afirst implantation angle with respect to the second direction and thesecond pocket ion implantation has a second implantation angle withrespect to the second direction. Each of the first implantation angleand the second implantation angle is substantially larger than 0° andless than 90°.

A further aspect of this description relates to method of forming anintegrated circuit. The method comprises forming a first doped region ina substrate using a first angle ion implantation performed on a firstside of a gate structure. The gate structure has a length in a firstdirection and a width in a second direction. The method also comprisesforming a second doped region in the substrate using a second angle ionimplantation performed on a second side of the gate structure. The firstangle ion implantation has a first implantation angle with respect tothe second direction and the second angle ion implantation has a secondimplantation angle with respect to the second direction. Each of thefirst implantation angle and the second implantation angle is no lessthan 5° and no greater than 85°. The first angle ion implantation has afirst implantation tilt angle greater than 0° and less than 90° withrespect to a third direction orthogonal to the first direction and thesecond direction. The second angle ion implantation has a secondimplantation tilt angle greater than 0° and less than 90° with respectto the third direction.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art will appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art will also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming an integrated circuit, themethod comprising: performing a first angle ion implantation on a firstside of a gate structure to form a first doped region in a substrate,the gate structure having a length in a first direction and a width in asecond direction; and performing a second angle ion implantation on asecond side of the gate structure to form a second doped region in thesubstrate, wherein the second angle ion implantation is performedseparately from the first angle ion implantation to cause the firstdoped region to be separated from the second doped region, the firstangle ion implantation has a first implantation angle with respect tothe second direction, the second angle ion implantation has a secondimplantation angle with respect to the second direction, and each of thefirst implantation angle and the second implantation angle issubstantially larger than 0° and less than 90°.
 2. The method of claim1, wherein at least one of the first angle ion implantation or thesecond angle ion implantation is a pocket ion implantation, asource/drain (S/D) ion implantation, or a lightly-doped drain (LDD) ionimplantation.
 3. The method of claim 2, wherein the first angle ionimplantation and the second angle ion implantation are pocket ionimplantations, the first angle ion implantation and the second angle ionimplantation have the same implantation angle, and the implantationangle ranges from about 5° to about 40°.
 4. The method of claim 2,wherein the first angle ion implantation and the second angle ionimplantation are pocket ion implantations, the first angle ionimplantation and the second angle ion implantation have the sameimplantation angle, and the implantation angle ranges from about 50° toabout 85°.
 5. The method of claim 2, wherein the first angle ionimplantation and the second angle ion implantation are pocket ionimplantations, the first angle ion implantation and the second angle ionimplantation have the same implantation angle, and the implantationangle ranges from about 15° to about 40°.
 6. The method of claim 2,wherein the first angle ion implantation and the second angle ionimplantation each have an implantation dosage that is lower than animplantation dosage of an ion implantation that has an implantationdirection that is orthogonal to a side edge of the gate structure. 7.The method of claim 1, wherein a space (s) is between the gate structureand a neighboring gate structure, the gate structure and the neighboringgate structure each have a height (h), the first angle ion implantationand the second angle ion implantation each have a tilt angle that istilted from a direction that is substantially orthogonal to a surface ofthe substrate, and the tilt angle ranges from about a tan(s/2h) to abouta tan(s/h).
 8. A method, comprising: forming a dummy gate structurehaving a length in a first direction and a width in a second directionover a substrate; performing a first pocket ion implantation to form afirst doped region in the substrate on a first side of the dummy gatestructure; and performing a second pocket ion implantation to form asecond doped region in the substrate on a second side of the dummy gatestructure, the second pocket ion implantation being different from thefirst pocket ion implantation, wherein the second pocket ionimplantation is performed separately from the first pocket ionimplantation to cause the first doped region to be separated from thesecond doped region, the first pocket ion implantation has a firstimplantation angle with respect to the second direction, the secondpocket ion implantation has a second implantation angle with respect tothe second direction, and each of the first implantation angle and thesecond implantation angle is substantially larger than 0° and less than90°.
 9. The method of claim 8, wherein the first pocket ion implantationand the second pocket ion implantation have the same implantation angleand the implantation angle ranges from about 5° to about 40°.
 10. Themethod of claim 8, wherein the first pocket ion implantation and thesecond pocket ion implantation have the same implantation angle and theimplantation angle ranges from about 50° to about 85°.
 11. The method ofclaim 8, wherein the first pocket ion implantation and the second pocketion implantation have the same implantation angle and the implantationangle ranges from about 15° to about 40°.
 12. The method of claim 8,wherein the first pocket ion implantation and the second pocket ionimplantation each have an implantation dosage that is lower than animplantation dosage of an ion implantation that has an implantationdirection that is orthogonal to a side edge of the gate structure. 13.The method of claim 8, wherein a space (s) is between the dummy gatestructure and a neighboring dummy gate structure, the dummy gatestructure and the neighboring dummy gate structure each have a height(h), the first pocket ion implantation and the second pocket ionimplantation each have a tilt angle that is tilted from a direction thatis substantially orthogonal to a surface of the substrate, and the tiltangle ranges from about a tan(s/2h) to about a tan(s/h).
 14. A method offorming an integrated circuit, the method comprising: performing a firstangle ion implantation on a first side of a gate structure to form afirst doped region in a substrate, the gate structure having a length ina first direction and a width in a second direction; and performing asecond angle ion implantation on a second side of the gate structure toform a second doped region in the substrate, wherein the second angleion implantation is performed separately from the first angle ionimplantation to cause the first doped region to be separated from thesecond doped region, the first angle ion implantation has a firstimplantation angle with respect to the second direction and the secondangle ion implantation has a second implantation angle with respect tothe second direction, each of the first implantation angle and thesecond implantation angle is no less than 5° and no greater than 85°,the first angle ion implantation has a first implantation tilt anglegreater than 0° and less than 90° with respect to a third directionorthogonal to the first direction and the second direction, and thesecond angle ion implantation has a second implantation tilt anglegreater than 0° and less than 90° with respect to the third direction.15. The method of claim 14, wherein the first angle ion implantationincludes at least one of a pocket ion implantation, a source/drain (S/D)ion implantation, or a lightly-doped drain (LDD) ion implantation. 16.The method of claim 15, wherein the first angle ion implantation is apocket ion implantation, and the implantation angle ranges from about 5°to about 40°.
 17. The method of claim 15, wherein the first angle ionimplantation is a pocket ion implantation, and the implantation angleranges from about 50° to about 85°.
 18. The method of claim 15, whereinthe first ion implantation is a pocket ion implantation, and theimplantation angle ranges from about 15° to about 40°.
 19. The method ofclaim 14, wherein a space (s) is between the gate structure and aneighboring gate structure, the gate structure and the neighboring gatestructure each have a height (h), the first angle ion implantation andthe second angle ion implantation each have a tilt angle that is tiltedfrom a direction that is substantially orthogonal to a surface of thesubstrate, and the tilt angle ranges from about a tan(s/2h) to about atan(s/h).
 20. The method of claim 19, wherein the gate structure and theneighboring gate structure comprise dummy gate structures having dummygate materials and spacers disposed on sidewalls of the dummy gatestructures, the method further comprising: removing the dummy gatematerials of the gate structure and the dummy gate structure to form aplurality of openings within the spacers; and filling the plurality ofopenings with one or more conductive materials to form an active gatestructure and an active neighboring gate structure over the substrate.